philips semiconductors product specification three quadrant triacs bta216 series d, e and f guaranteed commutation general description quick reference data passivated guaranteed commutation symbol parameter max. max. unit triacs in a plastic envelope intended for use in motor control circuits or with other bta216- 600d - highly inductive loads. these devices bta216- 600e 800e balance the requirements of commutation bta216- 600f 800f performance and gate sensitivity. the v drm repetitive peak off-state 600 800 v "sensitive gate" e series and "logic level" voltages d series are intended for interfacing with i t(rms) rms on-state current 16 16 a low power drivers, including micro i tsm non-repetitive peak on-state 140 140 a controllers. current pinning - to220ab pin configuration symbol pin description 1 main terminal 1 2 main terminal 2 3 gate tab main terminal 2 limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit -600 -800 v drm repetitive peak off-state - 600 1 800 v voltages i t(rms) rms on-state current full sine wave; - 16 a t mb 99 ?c i tsm non-repetitive peak full sine wave; on-state current t j = 25 ?c prior to surge t = 20 ms - 140 a t = 16.7 ms - 150 a i 2 ti 2 t for fusing t = 10 ms - 98 a 2 s di t /dt repetitive rate of rise of i tm = 20 a; i g = 0.2 a; - 100 a/ s on-state current after di g /dt = 0.2 a/ s triggering i gm peak gate current - 2 a v gm peak gate voltage - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms - 0.5 w period t stg storage temperature -40 150 ?c t j operating junction - 125 ?c temperature t1 t2 g 123 tab 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the triac may switch to the on-state. the rate of rise of current should not exceed 15 a/ s. february 2000 1 rev 1.000
philips semiconductors product specification three quadrant triacs bta216 series d, e and f guaranteed commutation thermal resistances symbol parameter conditions min. typ. max. unit r th j-mb thermal resistance full cycle - - 1.2 k/w junction to mounting base half cycle - - 1.7 k/w r th j-a thermal resistance in free air - 60 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit bta216- ...d ...e ...f i gt gate trigger current 2 v d = 12 v; i t = 0.1 a t2+ g+ - 1.3 5 10 25 ma t2+ g- - 2.6 5 10 25 ma t2- g- - 3.4 5 10 25 ma i l latching current v d = 12 v; i gt = 0.1 a t2+ g+ - 10.2 15 25 30 ma t2+ g- - 11.3 25 30 40 ma t2- g- - 19.3 25 30 40 ma i h holding current v d = 12 v; i gt = 0.1 a - 8 15 25 30 ma ...d, e, f v t on-state voltage i t = 20 a - 1.2 1.5 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.7 1.5 v v d = 400 v; i t = 0.1 a; 0.25 0.4 - v t j = 125 ?c i d off-state leakage current v d = v drm(max) ; - 0.1 0.5 ma t j = 125 ?c dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit bta216- ...d ...e ...f ...d dv d /dt critical rate of rise of v dm = 67% v drm(max) ; 30607065 -v/ s off-state voltage t j = 110 ?c; exponential waveform; gate open circuit di com /dt critical rate of change of v dm = 400 v; t j = 110 ?c; 2.5 4.7 9.5 7.5 - a/ms commutating current i t(rms) = 16 a; dv com /dt = 20v/ s; gate open circuit di com /dt critical rate of change of v dm = 400 v; t j = 110 ?c; 12 40 50 100 - a/ms commutating current i t(rms) = 16 a; dv com /dt = 0.1v/ s; gate open circuit ...d, e, f t gt gate controlled turn-on i tm = 20 a; v d = v drm(max) ;- - - 2 - s time i g = 0.1 a; di g /dt = 5 a/ s 2 device does not trigger in the t2-, g+ quadrant. february 2000 2 rev 1.000
philips semiconductors product specification three quadrant triacs bta216 series d, e and f guaranteed commutation fig.1. maximum on-state dissipation, p tot , versus rms on-state current, i t(rms) , where = conduction angle. fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 20ms. fig.3. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.4. maximum permissible rms current i t(rms) , versus mounting base temperature t mb . fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t mb 99?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 0 5 10 15 20 0 5 10 15 20 25 = 180 120 90 60 30 it(rms) / a ptot / w tmb(max) / c 125 119 113 107 101 95 1 -50 0 50 100 150 0 5 10 15 20 bt139 99 c tmb / c it(rms) / a 10us 100us 1ms 10ms 100ms 10 100 1000 t / s itsm / a t i tsm time i tj initial = 25 c max t di /dt limit t 0.01 0.1 1 10 0 10 20 30 40 50 surge duration / s it(rms) / a 1 10 100 1000 0 50 100 150 number of cycles at 50hz itsm / a t i tsm time i tj initial = 25 c max t -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 tj / c vgt(tj) vgt(25 c) february 2000 3 rev 1.000
philips semiconductors product specification three quadrant triacs bta216 series d, e and f guaranteed commutation fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-mb , versus pulse width t p . fig.12. minimum, critical rate of change of commutating current di com /dt versus junction temperature, dv com /dt = 20v/ s. 0 0.5 1 1.5 2 2.5 3 -50 0 50 100 150 t2+ g+ t2+ g- t2- g- tj/ c igt(tj) igt(25 c) 0 0.5 1 1.5 2 2.5 3 0 10 20 30 40 50 bt139 vt / v it / a tj = 125 c tj = 25 c typ max vo = 1.195 v rs = 0.018 ohms -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c il(tj) il(25 c) 0.001 0.01 0.1 1 10 tp / s zth j-mb (k/w) 10us 0.1ms 1ms 10ms 0.1s 1s 10s t p p t d unidirectional bidirectional -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c ih(tj) ih(25c) 1 10 100 20 40 60 80 100 120 140 f type e type d type tj/ ? c dicom/dt (a/ms) february 2000 4 rev 1.000
philips semiconductors product specification three quadrant triacs bta216 series d, e and f guaranteed commutation mechanical data dimensions in mm net mass: 2 g fig.13. sot78 (to220ab). pin 2 connected to mounting base. notes 1. refer to mounting instructions for sot78 (to220) envelopes. 2. epoxy meets ul94 v0 at 1/8". 10,3 max 3,7 2,8 3,0 3,0 max not tinned 1,3 max (2x) 123 2,4 0,6 4,5 max 5,9 min 15,8 max 1,3 2,54 2,54 0,9 max (3x) 13,5 min february 2000 5 rev 1.000
philips semiconductors product specification three quadrant triacs bta216 series d, e and f guaranteed commutation definitions data sheet status objective specification this data sheet contains target or goal specifications for product development. preliminary specification this data sheet contains preliminary data; supplementary data may be published later. product specification this data sheet contains final product specifications. limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. ? philips electronics n.v. 2000 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. february 2000 6 rev 1.000
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